15 results
TEM Study of Mg-Doped Bulk GaN Crystals
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 363
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- 1999
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Effect of N/Ga Flux Ratio in GaN Buffer Layer Growth by MBE on (0001) Sapphire on Defect Formation in the GaN Main Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 295
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- 1999
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Contact Issues of GaN Technology
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 49-56
- Print publication:
- 1999
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Atomic Structure of Twinned As Precipitates in Lt-GaAs
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- Journal:
- Microscopy and Microanalysis / Volume 4 / Issue S2 / July 1998
- Published online by Cambridge University Press:
- 02 July 2020, pp. 664-665
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- July 1998
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Contact Issues of GaN Technology
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G1.5
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- 1998
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Role of Dopants and Impurities on Pinhole Formation; Defects Formed At Ingan/Gan And AlGaN/GaN Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 375
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- 1997
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Tem/Hrem Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 287
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- 1997
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Atomic Structure Of Grain Boundaries And Interfaces In Iiinitrides Epitaxial Systems
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 387
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- 1997
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Intrinsic and Thermal Stress in Gallium Nitride Epitaxial Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 775
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- 1996
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Tem Structural Characterization of Nm-Scale Islands in Highly Mismatched Systems
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- Journal:
- MRS Online Proceedings Library Archive / Volume 421 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 383
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- 1996
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Effect of Stoichiometry on Defect Distribution in Cubic GaN Grown on GaAs by Plasma-Assisted MBE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 251
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- 1996
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Effect of Si Doping on The Structure of Gan
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 487
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- 1996
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Tem Structure Characterization Of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts For n-GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 201
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- 1996
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Nano-Tubes in GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 417
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- 1996
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Structural Defects in Heteroepitaxial and Homoepitaxial GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 351
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- 1995
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